دیتاشیت IXXH80N65B4H1
مشخصات دیتاشیت
| نام دیتاشیت |
IXXH80N65B4
|
| حجم فایل |
217.231
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
PT
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Littelfuse/IXYS IXXH80N65B4H1
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
160A
-
Power Dissipation (Pd):
625W
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Turn?on Delay Time (Td(on)):
38ns
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Input Capacitance (Cies@Vce):
-
-
Turn?on Switching Loss (Eon):
3.77mJ
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Total Gate Charge (Qg@Ic,Vge):
120nC
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Turn?off Delay Time (Td(off)):
120ns
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Pulsed Collector Current (Icm):
430A
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Turn?off Switching Loss (Eoff):
1.2mJ
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Diode Reverse Recovery Time (Trr):
150ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2V@15V,80A
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Package:
TO-247
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Manufacturer:
IXYS
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Series:
GenX4™, XPT™
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
PT
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
160A
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Current - Collector Pulsed (Icm):
430A
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Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 80A
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Power - Max:
625W
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Switching Energy:
3.77mJ (on), 1.2mJ (off)
-
Input Type:
Standard
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Gate Charge:
120nC
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Td (on/off) @ 25°C:
38ns/120ns
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Test Condition:
400V, 80A, 3Ohm, 15V
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247 (IXXH)
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detail:
IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH)
